Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6

M. Filippi (1) , B. Kundys (1) , R. Ranjith (1) , Asish Kundu (1) , Wilfrid Prellier (1)

1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux

Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4∕3Co2∕3O6 . Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples. This work was carried out in the framework of the the STREP MaCoMuFi (NMP3-CT-2006-033221) and the STREP CoMePhS (NMP4 CT-2005-517039) supported by the European Community and the CNRS. The authors would also like to acknowledge W.C. Sheets, Ch. Simon, and J.F. Scott for careful reading of the manuscript.

Domains: Physics [physics]; Chemical Sciences; Material chemistry

M. Filippi, B. Kundys, R. Ranjith, Asish Kundu, Wilfrid Prellier. Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6. Applied Physics Letters, 2008, 92 (21), pp.212905. ⟨10.1063/1.2929745⟩. ⟨hal-03545131⟩