Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Rosine Coq Germanicus; E. Picard; B. Domenges; K. Danilo; R. Rogel

doi:10.1016/j.apsusc.2006.12.114

Journal articles

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Rosine Coq Germanicus ¹ E. Picard ² B. Domenges ¹ K. Danilo ¹ R. Rogel ^{3, 4}

1 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs

2 IETR - Institut d'Electronique et de Télécommunications de Rennes

3 Groupe de Microélectronique et Visualisation

4 UNIV-RENNES - Université de Rennes

Abstract : In this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical properties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer.

Keywords : ISD polysilicon LPCVD AFM TEM SCM Surface potential C-AFM

Document type :

Journal articles

Domain :

Physics [physics]

Physics [physics] / Condensed Matter [cond-mat]

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Complete list of metadatas

https://hal-normandie-univ.archives-ouvertes.fr/hal-02533135
Contributor : Rosine Coq Germanicus <>
Submitted on : Monday, April 6, 2020 - 11:36:14 AM
Last modification on : Monday, October 5, 2020 - 9:44:04 AM

Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

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Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

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