Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains

Rosine Coq Germanicus (1) , E. Picard (2) , B. Domenges (1) , K. Danilo (1) , R. Rogel (3, 4)

1 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs
2 IETR - Institut d'Electronique et de Télécommunications de Rennes
3 Groupe de Microélectronique et Visualisation
4 UR - Université de Rennes

In this work, we demonstrate that atomic force microscopy allows topography measurement as well as the local electrical properties of very high-doped polysilicon film prior to any subsequent annealing. AFM and TEM observations showed the columnar microstructure of the polysilicon layer. The electrical effect of this microstructure was characterized using SCM, KFM and C-AFM. Each electric mode gives additional information on the local properties of the polysilicon layer.

Mots clés: ISD polysilicon LPCVD AFM TEM SCM Surface potential C-AFM; ISD polysilicon LPCVD AFM TEM SCM Surface potential C-AFM

Domaines: Physique [physics]; Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

Rosine Coq Germanicus, E. Picard, B. Domenges, K. Danilo, R. Rogel. Microstructure and electrical characterization based on AFM of very high-doped polysilicon grains. Applied Surface Science, 2007, 253 (14), pp.6006-6012. ⟨10.1016/j.apsusc.2006.12.114⟩. ⟨hal-02533135⟩