Journal Articles
Microelectronics Reliability
Year : 2010
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306946
Submitted on : Monday, October 7, 2019-10:59:39 AM
Last modification on : Friday, March 24, 2023-2:53:12 PM
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- HAL Id : hal-02306946 , version 1
- DOI : 10.1016/j.microrel.2010.07.002
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A. Alaeddine, Moncef Kadi, K. Daoud, B. Beydoun. Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectronics Reliability, 2010, 50 (12), pp.1961-1966. ⟨10.1016/j.microrel.2010.07.002⟩. ⟨hal-02306946⟩
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