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Characteristics degradation of the SiGe HBT under electromagnetic field stress

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306946
Contributor : Moncef Kadi <>
Submitted on : Monday, October 7, 2019 - 10:59:39 AM
Last modification on : Wednesday, October 9, 2019 - 1:37:29 AM

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A. Alaeddine, Moncef Kadi, K. Daoud, B. Beydoun. Characteristics degradation of the SiGe HBT under electromagnetic field stress. Microelectronics Reliability, Elsevier, 2010, 50 (12), pp.1961-1966. ⟨10.1016/j.microrel.2010.07.002⟩. ⟨hal-02306946⟩

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