Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

Shawki Douzi; Moncef Kadi; Habib Boulzazen; Mohamed Tlig; Jaleleddine Ben Hadj Slama

Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

Shawki Douzi ^{1, 2} Moncef Kadi ¹ Habib Boulzazen ¹ Mohamed Tlig ² Jaleleddine Ben Hadj Slama ²

1 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués

2 ESSTHS - Ecole Supérieure des Sciences et de Technologie de Hammam Sousse

Abstract : The electromagnetic compatibility (EMC) study is an indispensable step in the development cycle of power system modules. In power applications using normally off transistors, short-circuit mode can be recurrent during operation, especially when powering converters. In this paper, we present a study on the evolution of conducted interferences (in common and differential mode voltages) generated by a static converter after an aging test of silicon carbide (SiC) MOSFET transistors from the first generation of CREE subjected to repetitive short-circuit operations. This work presents an experimental investigation of the repetitive short-circuit aging effect of N Channel power SiC MOSFETs on the amplitude of resonances in the interference spectra after aging tests. Experimental results are presented and analyzed.

Type de document :

Article dans une revue

Domaine :

Physique [physics]

Sciences de l'ingénieur [physics]

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02305461
Contributeur : Moncef Kadi <>
Soumis le : vendredi 4 octobre 2019 - 11:13:43
Dernière modification le : dimanche 20 octobre 2019 - 01:18:42

Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

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Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

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