Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests

Shawki Douzi (1, 2) , Moncef Kadi (3) , Habib Boulzazen (3) , Mohamed Tlig (2) , Jaleleddine Ben Hadj Slama (2)

1 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués
2 ESSTHS - Ecole Supérieure des Sciences et de Technologie de Hammam Sousse
3 Pôle Electronique et Systèmes

The electromagnetic compatibility (EMC) study is an indispensable step in the development cycle of power system modules. In power applications using normally off transistors, short-circuit mode can be recurrent during operation, especially when powering converters. In this paper, we present a study on the evolution of conducted interferences (in common and differential mode voltages) generated by a static converter after an aging test of silicon carbide (SiC) MOSFET transistors from the first generation of CREE subjected to repetitive short-circuit operations. This work presents an experimental investigation of the repetitive short-circuit aging effect of N Channel power SiC MOSFETs on the amplitude of resonances in the interference spectra after aging tests. Experimental results are presented and analyzed.

Domaines: Physique [physics]; Sciences de l'ingénieur [physics]

Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama. Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests. Microelectronics Reliability, 2018, 88-90, pp.219-224. ⟨10.1016/j.microrel.2018.06.092⟩. ⟨hal-02305461⟩