Effect of SiC MOSFET Terminal Capacitances Evolution after Short-Circuit Aging Tests on Conducted EMI in a Boost Converter

Chawki Douzi (1) , Moncef Kadi (2, 1, 3) , Jaleleddine Ben Hadj Slama (4)

1 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués
2 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique
3 Pôle Electronique et Systèmes
4 ENISo - Ecole Nationale d'Ingénieurs de Sousse

Firstly, this paper presents the effect of short-circuit aging test on the electrical characteristics of Silicon Carbide (SiC) MOSFET. Experimental test is detailed and the evolution of parasitic input, output, reverse transfer capacitances (Ciss, Coss and Crss) is presented. Moreover, three capacitances between terminals, drain-source, gate-source and gate-drain capacitances (Cds, Cgs and Cgd) are evaluated before and after repetitive short-circuit aging test. Secondly, in order to verify if the variation of these capacitances after aging can influence the Electromagnetic Interferences (EMI), we present a comparison of the EMI generated by a DC-DC boost converter before and after repetitive short-circuit aging test. Therefore, this work presents an experimental study of the short-circuit aging effect on the C-V characterization of SiC MOSFET to evaluate its electromagnetic behavior after degradation.

Domaines: Sciences de l'ingénieur [physics]; Energie électrique; Electronique

Chawki Douzi, Moncef Kadi, Jaleleddine Ben Hadj Slama. Effect of SiC MOSFET Terminal Capacitances Evolution after Short-Circuit Aging Tests on Conducted EMI in a Boost Converter. 2021 13th International Workshop on the Electromagnetic Compatibility of Integrated Circuits (EMC Compo), Mar 2022, Bruges, Belgium. pp.29-34, ⟨10.1109/EMCCompo52133.2022.9758597⟩. ⟨hal-03964891⟩