A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications

Chawki Douzi (1) , Moncef Kadi (1) , Pascal Dherbécourt (2) , Mohamed Akram Besserour (1) , Eric Joubert (2) , François Fouquet (1)

1 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués
2 GPM - Groupe de physique des matériaux

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

Chawki Douzi, Moncef Kadi, Pascal Dherbécourt, Mohamed Akram Besserour, Eric Joubert, et al.. A novel methodology to characterize LGA packaged GaN power transistors using a mother/daughter board configuration for the reliability qualification in the mild hybrid applications. Microelectronics Reliability, 2022, 138, pp.114777. ⟨10.1016/j.microrel.2022.114777⟩. ⟨hal-03882052⟩