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Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties

Abstract : Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-03805380
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Submitted on : Friday, October 7, 2022 - 11:24:53 AM
Last modification on : Saturday, October 8, 2022 - 3:58:57 AM

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José Cardoso, Nabiha Ben Sedrine, Przemysław Jóźwik, Miguel Sequeira, Christian Wetzel, et al.. Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties. Journal of Materials Chemistry C, 2021, 9 (28), pp.8809-8818. ⟨10.1039/d1tc01603b⟩. ⟨hal-03805380⟩

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