Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties

José Cardoso , Nabiha Ben Sedrine , Przemysław Jóźwik , Miguel Sequeira , Christian Wetzel , Clara Grygiel (1) , Katharina Lorenz , Teresa Monteiro , Maria Rosário P. Correia

1 MADIR - Matériaux, Défauts et IRradiations

Xe SHI irradiation of InGaN/GaN MQWs leads to surface damage and intermixing at the interfaces. The introduced defects cause a strong quenching of the luminescence as well as a change in the excitation mechanisms.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

José Cardoso, Nabiha Ben Sedrine, Przemysław Jóźwik, Miguel Sequeira, Christian Wetzel, et al.. Exploring swift-heavy ion irradiation of InGaN/GaN multiple quantum wells for green-emitters: the use of Raman and photoluminescence to assess the irradiation effects on the optical and structural properties. Journal of Materials Chemistry C, 2021, 9 (28), pp.8809-8818. ⟨10.1039/d1tc01603b⟩. ⟨hal-03805380⟩