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Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6

Abstract : Impedance measurements have been performed on a sintered polycrystalline sample of the perovskite LaBiMn4∕3Co2∕3O6 . Colossal dielectric permittivity is often measured in this class of semiconducting materials as a result of extrinsic factors. Our results show that a large offset in the capacitance, measured on a series of samples with different thickness, is due to the interfacial polarization. This contribution can then be removed from the data, creating a general procedure for dielectric measurements in semiconducting samples. This work was carried out in the framework of the the STREP MaCoMuFi (NMP3-CT-2006-033221) and the STREP CoMePhS (NMP4 CT-2005-517039) supported by the European Community and the CNRS. The authors would also like to acknowledge W.C. Sheets, Ch. Simon, and J.F. Scott for careful reading of the manuscript.
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Submitted on : Thursday, January 27, 2022 - 9:49:15 AM
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M. Filippi, B. Kundys, R. Ranjith, Asish Kundu, Wilfrid Prellier. Interfacial contribution to the dielectric response in semiconducting LaBiMn4∕3Co2∕3O6. Applied Physics Letters, American Institute of Physics, 2008, 92 (21), pp.212905. ⟨10.1063/1.2929745⟩. ⟨hal-03545131⟩



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