Optimized sub-40 nm planar patterning process for a La0.7Sr0.3MnO3 magnetic memory

Wilfrid Prellier (1) , Nguyen Hoa Hong , Antoine Ruyter (2) , Joe Sakai (2) , Awatef Hassini , François Gervais (2) , A. Fouchet (1) , B. Mercey (1) , L. Méchin (3) , V. Kulkarni , T. Venkatesan (4) , P. Padhan (1) , Ch. Simon (1) , Hoa Hong Nguyen , S de Brion (5) , G Chouteau (5) , A Janossy (6) , E Rauwel Buzin , M. Koubaa (7) , A.M. Haghiri-Gosnet , J.P. Renard , M. Veis , V. Kolinsky , S. Visnovsky , Ph. Lecoeur (1) , M. Darques , R. Soulimane

1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
2 LEMA - Laboratoire d'Electrodynamique des Matériaux Avancés
3 Laboratoire de Microbiologie Industrielle
4 NUS - National University of Singapore
5 LCMI-GHMFL - Laboratoire des champs magnétiques intenses
6 Institute of Physics and Solids in Magnetic Fields Research Group of the Hungarian Academy of Sciences
7 Laboratoire de Physique des Matériaux.Sfax 3000, Tunisia.

Domains: Physics [physics]; Chemical Sciences; Material chemistry

Wilfrid Prellier, Nguyen Hoa Hong, Antoine Ruyter, Joe Sakai, Awatef Hassini, et al.. Optimized sub-40 nm planar patterning process for a La0.7Sr0.3MnO3 magnetic memory. Journal of Electroanalytical Chemistry, 2005, 584 (1), pp.34-37. ⟨10.1016/j.jelechem.2004.02.021⟩. ⟨hal-03544992⟩