Evolution of Electrical Performance in First Generation of SiC MOSFET for Low Voltage Applications after Short-Circuit Aging Tests

Chawki Douzi; Moncef Kadi; Jaleleddine Ben Hadj Slama

doi:10.1109/IREC52758.2021.9624831

Conference Papers Year :

Evolution of Electrical Performance in First Generation of SiC MOSFET for Low Voltage Applications after Short-Circuit Aging Tests

(1) , (1, 2) , (3)

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Chawki Douzi

Function : Author

Institut de Recherche en Systèmes Electroniques Embarqués

Moncef Kadi

Function : Author
PersonId : 173747
IdHAL : moncef-kadi
IdRef : 084533242

Institut de Recherche en Systèmes Electroniques Embarqués

Pôle Electronique et Systèmes

CV

Jaleleddine Ben Hadj Slama

Function : Author

Laboratory of Advanced Technology and Intelligent Systems

Domains

Engineering Sciences [physics] Engineering Sciences [physics] Electric power Engineering Sciences [physics] Electronics

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https://hal-normandie-univ.archives-ouvertes.fr/hal-03516144

Submitted on : Friday, January 7, 2022-9:28:58 AM

Last modification on : Thursday, March 9, 2023-12:05:26 PM

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hal-03516144 , version 1 (07-01-2022)

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HAL Id : hal-03516144 , version 1
DOI : 10.1109/IREC52758.2021.9624831

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Chawki Douzi, Moncef Kadi, Jaleleddine Ben Hadj Slama. Evolution of Electrical Performance in First Generation of SiC MOSFET for Low Voltage Applications after Short-Circuit Aging Tests. 2021 12th International Renewable Energy Congress (IREC), Oct 2021, Hammamet, Tunisia. pp.1-6, ⟨10.1109/IREC52758.2021.9624831⟩. ⟨hal-03516144⟩

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Evolution of Electrical Performance in First Generation of SiC MOSFET for Low Voltage Applications after Short-Circuit Aging Tests

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