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Journal articles

Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET

Abstract : The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-03511987
Contributor : Rosine Coq Germanicus Connect in order to contact the contributor
Submitted on : Wednesday, January 5, 2022 - 11:06:27 AM
Last modification on : Tuesday, May 17, 2022 - 2:10:08 PM

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K. Niskanen, A. Touboul, Rosine Coq Germanicus, A. Michez, A. Javanainen, et al.. Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, 67 (7), pp.1365-1373. ⟨10.1109/TNS.2020.2983599⟩. ⟨hal-03511987⟩

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