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Journal articles
Impact of Electrical Stress and Neutron Irradiation on Reliability of Silicon Carbide Power MOSFET
Abstract : The combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The single-event burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling the electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
Keywords :
Neutrons
Radiation effects
Stress
Logic gates
Silicon carbide
Electric breakdown
MOSFET
Neutron effects
Power MOSFET
Semiconductor device breakdown
Semiconductor device models
Semiconductor device reliability
Silicon compounds
Technology CAD (electronics)
Wide band gap semiconductors
Atmospheric neutrons
Silicon carbide (SiC)
Single-event burnout (SEB)
https://hal-normandie-univ.archives-ouvertes.fr/hal-03511987
Contributor : Rosine Coq Germanicus Connect in order to contact the contributor
Submitted on : Wednesday, January 5, 2022 - 11:06:27 AM
Last modification on : Tuesday, May 17, 2022 - 2:10:08 PM
Contributor : Rosine Coq Germanicus Connect in order to contact the contributor
Submitted on : Wednesday, January 5, 2022 - 11:06:27 AM
Last modification on : Tuesday, May 17, 2022 - 2:10:08 PM
