Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Materials Engineering Sciences [physics] Electronics

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Submitted on : Tuesday, December 7, 2021-3:07:19 PM

Last modification on : Friday, March 24, 2023-2:53:24 PM

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hal-03469148 , version 1 (07-12-2021)

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HAL Id : hal-03469148 , version 1
DOI : 10.1016/j.microrel.2021.114295

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Niemat Moultif, Sébastien Duguay, O. Latry, M. Ndiaye, Eric Joubert. Reliability and failure analysis in power GaN-HEMTs during S-band pulsed-RF operating. Microelectronics Reliability, 2021, 126, pp.114295. ⟨10.1016/j.microrel.2021.114295⟩. ⟨hal-03469148⟩

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