Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

P. Dumas; P.-L. Julliard; J. Borrel; S. Duguay; F. Hilario; F. Deprat; V. Lu; W. Zhao; W Zou; E. Arevalo; D. Blavette

doi:10.1063/5.0049782

Journal Articles Journal of Applied Physics Year : 2021

Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

(1) , , , , , , , , , ,

1

P. Dumas

Function : Author
PersonId : 755720
ORCID : 0000-0003-0480-2775

STMicroelectronics [Crolles]

P.-L. Julliard

Function : Author

J. Borrel

Function : Author
PersonId : 783548
ORCID : 0000-0003-0226-6622

S. Duguay

Function : Author
PersonId : 174454
IdHAL : sebastien-duguay
ORCID : 0000-0002-7039-6018

CV

F. Hilario

Function : Author
PersonId : 801820
ORCID : 0000-0002-5835-5520

F. Deprat

Function : Author

V. Lu

Function : Author

W. Zhao

Function : Author

W Zou

Function : Author

E. Arevalo

Function : Author

D. Blavette

Function : Author

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Physics [physics]

Didier Blavette : Connect in order to contact the contributor

https://hal-normandie-univ.archives-ouvertes.fr/hal-03468001

Submitted on : Monday, December 6, 2021-6:48:58 PM

Last modification on : Monday, December 6, 2021-6:48:58 PM

Dates and versions

hal-03468001 , version 1 (06-12-2021)

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HAL Id : hal-03468001 , version 1
DOI : 10.1063/5.0049782

Cite

P. Dumas, P.-L. Julliard, J. Borrel, S. Duguay, F. Hilario, et al.. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩. ⟨hal-03468001⟩

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Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

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