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Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling

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https://hal-normandie-univ.archives-ouvertes.fr/hal-03468001
Contributor : Didier Blavette Connect in order to contact the contributor
Submitted on : Monday, December 6, 2021 - 6:48:58 PM
Last modification on : Monday, December 6, 2021 - 6:48:58 PM

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P. Dumas, P.-L. Julliard, J. Borrel, S. Duguay, F. Hilario, et al.. Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling. Journal of Applied Physics, American Institute of Physics, 2021, 129 (19), pp.195706. ⟨10.1063/5.0049782⟩. ⟨hal-03468001⟩

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