Skip to Main content Skip to Navigation
Conference papers

Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Document type :
Conference papers
Complete list of metadata

https://hal-normandie-univ.archives-ouvertes.fr/hal-03354896
Contributor : Pascal Dherbecourt Connect in order to contact the contributor
Submitted on : Sunday, September 26, 2021 - 9:29:56 PM
Last modification on : Wednesday, November 3, 2021 - 6:35:55 AM

Identifiers

Citation

Al Mehdi Bouchour, Pascal Dherbécourt, Ahmed El Oualkadi, Olivier Latry. Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements. 2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩. ⟨hal-03354896⟩

Share

Metrics

Record views

19