Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements

Extraction d’éléments parasites des transistors de puissance packagés GaN HEMT par la mesure de paramètres S

Al Mehdi Bouchour (1) , Pascal Dherbécourt (2) , Ahmed El Oualkadi (1) , Olivier Latry (2)

1 Labtic - Laboratoire des Technologies de l'Information et de la Communication
2 GPM - Groupe de physique des matériaux

Domains: Engineering Sciences [physics]; Physics [physics]

Al Mehdi Bouchour, Pascal Dherbécourt, Ahmed El Oualkadi, Olivier Latry. Parasitic Elements Extraction of the GaN HEMT Packaged Power Transistors based on S-parameter measurements. 2020 International Symposium on Advanced Electrical and Communication Technologies (ISAECT), Nov 2020, Marrakech, Morocco. pp.1-6, ⟨10.1109/ISAECT50560.2020.9523645⟩. ⟨hal-03354896⟩