Interface dislocations in InxGa1–xN/GaN heterostructures - Archive ouverte HAL Access content directly
Journal Articles Phys.Status Solidi A Year : 2016

Interface dislocations in InxGa1–xN/GaN heterostructures

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Physics [physics] Physics [physics] Chemical Sciences Cristallography Chemical Sciences Material chemistry

Marie-Pierre Chauvat  : Connect in order to contact the contributor

https://hal-normandie-univ.archives-ouvertes.fr/hal-03351874

Submitted on : Wednesday, September 22, 2021-4:15:24 PM

Last modification on : Friday, March 24, 2023-2:53:23 PM

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hal-03351874 , version 1 (22-09-2021)

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  • HAL Id : hal-03351874 , version 1

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Q.T. Li, A. Minj, M-P Chauvat, Jun Chen, Ruterana P.. Interface dislocations in InxGa1–xN/GaN heterostructures. Phys.Status Solidi A, 2016. ⟨hal-03351874⟩

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