Damage in graphene due to electronic excitation induced by highly charged ions

J Hopster (1) , R Kozubek (1) , B Ban-D’etat (2, 3) , S Guillous (2, 3) , Henning Lebius (2, 3) , M Schleberger (1)

1 Fachbereich Physik [Duisburg]
2 MADIR - Matériaux, Défauts et IRradiations
3 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

Graphene is expected to be rather insensitive to ion irradiation. We demonstrate that single layers of exfoliated graphene sustain significant damage from irradiation with slow highly charged ions. We have investigated the ion induced changes of graphene after irradiation with highly charged ions of different charge states (q = 28–42) and kinetic energies (Ekin = 150–450 keV). Atomic force microscopy images reveal that the ion induced defects are not topographic in nature but are related to a significant change in friction. To create these defects, a minimum charge state is needed. In addition to this threshold behaviour, the required minimum charge state as well as the defect diameter show a strong dependency on the kinetic energy of the projectiles. From the linear dependency of the defect diameter on the projectile velocity we infer that electronic excitations triggered by the incoming ion in the above-surface phase play a dominant role for this unexpected defect creation in graphene.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

J Hopster, R Kozubek, B Ban-D’etat, S Guillous, Henning Lebius, et al.. Damage in graphene due to electronic excitation induced by highly charged ions. 2D Materials, 2014, 1 (1), pp.011011. ⟨10.1088/2053-1583/1/1/011011⟩. ⟨hal-03198840⟩