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Response of GaN to energetic ion irradiation: conditions for ion track formation

Abstract : We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift heavy ions (92 MeV Xe23+, 23 MeV I6+) and highly charged ions (100 keV Xe40+) were used. After irradiation, the samples were investigated using atomic force microscopy, grazing incidence small angle x-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis. Only grazing incidence swift heavy ion irradiation induced changes on the surface of the GaN, when the appearance of nanoholes is accompanied by a notable loss of nitrogen. The results are discussed in the framework of the thermal spike model.
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Contributor : Henning Lebius Connect in order to contact the contributor
Submitted on : Tuesday, April 13, 2021 - 10:47:21 AM
Last modification on : Tuesday, October 19, 2021 - 11:34:58 PM

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M Karlušić, R Kozubek, Henning Lebius, B Ban-D’etat, R Wilhelm, et al.. Response of GaN to energetic ion irradiation: conditions for ion track formation. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (32), pp.325304. ⟨10.1088/0022-3727/48/32/325304⟩. ⟨hal-03196764⟩



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