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Journal articles
Response of GaN to energetic ion irradiation: conditions for ion track formation
M Karlušić
1
R Kozubek
2
Henning Lebius
3
B Ban-D’etat
3
R Wilhelm
4
M Buljan
1
Z Siketić
1
F Scholz
5
T Meisch
5
M Jakšić
1
S Bernstorff
6
M Schleberger
2
B Šantić
1
3
MADIR - Matériaux, Défauts et IRradiations
CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
M Karlušić 1
Author
R Kozubek 2
Author
Henning Lebius 3
Author IdHAL : henning-lebius ORCID : https://orcid.org/0000-0002-4347-3073
B Ban-D’etat 3
Author
B Šantić 1
Author
1
IRB - Institut Ruđer Bošković (Croatia)
2
Fachbereich Physik [Duisburg] (Campus Duisburg Lotharstr. 1, 47048 Duisburg - Germany)
- Universität Duisburg-Essen [Essen] (Universitätsstraße 2, 45141 Essen - Germany)
3
MADIR - Matériaux, Défauts et IRradiations (6 Boulevard Maréchal Juin 14050 Caen cedex 4 - France)
- CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique (CIMAP - UMR 6252, 6, Boulevard du Maréchal Juin 14050 Caen cedex 4 - France)
- CNRS - Centre National de la Recherche Scientifique : UMR 6252 (France)
- ENSICAEN - École Nationale Supérieure d'Ingénieurs de Caen (6, Boulevard du Maréchal Juin CS 45053 14050 CAEN cedex 04 - France)
- NU - Normandie Université (Esplanade de la Paix - CS 14032 - 14032 Caen Cedex 5 - France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRF/IRAMIS (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
- UNICAEN - Université de Caen Normandie (Esplanade de la Paix - CS 14032 - 14032 CAEN Cedex 5 - France)
- NU - Normandie Université (Esplanade de la Paix - CS 14032 - 14032 Caen Cedex 5 - France)
4
HZDR - Helmholtz-Zentrum Dresden-Rossendorf (Bautzner Landstraße 400, 01328 Dresden - Germany - Germany)
5
Universität Ulm - Ulm University [Ulm, Allemagne] (Helmholtzstraße 16, 89081 Ulm - Germany)
6
Elettra Sincrotrone Trieste (S.C.p.A., 34149 Basovizza, Trieste, Italia - Italy)
Abstract : We investigated the response of wurzite GaN thin films to energetic ion irradiation. Both swift heavy ions (92 MeV Xe23+, 23 MeV I6+) and highly charged ions (100 keV Xe40+) were
used. After irradiation, the samples were investigated using atomic force microscopy, grazing incidence small angle x-ray scattering, Rutherford backscattering spectroscopy in channelling orientation and time of flight elastic recoil detection analysis. Only grazing incidence swift heavy ion irradiation induced changes on the surface of the GaN, when the appearance of nanoholes is accompanied by a notable loss of nitrogen. The results are discussed in the framework of the thermal spike model.
Document type :
Journal articles
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https://hal-normandie-univ.archives-ouvertes.fr/hal-03196764
Contributor : Henning Lebius Connect in order to contact the contributor
Submitted on : Tuesday, April 13, 2021 - 10:47:21 AM
Last modification on : Tuesday, October 19, 2021 - 11:34:58 PM
Contributor : Henning Lebius Connect in order to contact the contributor
Submitted on : Tuesday, April 13, 2021 - 10:47:21 AM
Last modification on : Tuesday, October 19, 2021 - 11:34:58 PM
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Identifiers
- HAL Id : hal-03196764, version 1
- DOI : 10.1088/0022-3727/48/32/325304
Collections
COMUE-NORMANDIE | CEA | IRAMIS-CIMAP | ENSICAEN | UNICAEN | CNRS | MADIR-CIMAP | CIMAP | IRAMIS | GS-ENGINEERING
Citation
M Karlušić, R Kozubek, Henning Lebius, B Ban-D’etat, R Wilhelm, et al.. Response of GaN to energetic ion irradiation: conditions for ion track formation. Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (32), pp.325304. ⟨10.1088/0022-3727/48/32/325304⟩. ⟨hal-03196764⟩
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