Skip to Main content Skip to Navigation
Journal articles

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

Document type :
Journal articles
Complete list of metadata

https://hal-normandie-univ.archives-ouvertes.fr/hal-03174499
Contributor : Eric Joubert <>
Submitted on : Friday, March 19, 2021 - 11:34:21 AM
Last modification on : Saturday, March 20, 2021 - 3:19:03 AM

Identifiers

Citation

Niemat Moultif, Olivier Latry, Eric Joubert, Mohamed Ndiaye, Christian Moreau, et al.. Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress. IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩. ⟨hal-03174499⟩

Share

Metrics

Record views

23