Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Power Electronics Year : 2021

Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress

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Engineering Sciences [physics] Electronics

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https://hal-normandie-univ.archives-ouvertes.fr/hal-03174499

Submitted on : Friday, March 19, 2021-11:34:21 AM

Last modification on : Friday, March 24, 2023-2:53:21 PM

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hal-03174499 , version 1 (19-03-2021)

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Niemat Moultif, Olivier Latry, Eric Joubert, Mohamed Ndiaye, Christian Moreau, et al.. Reliability Assessment Of AlGaN/GaN HEMTs on the SiC Substrate Under the RF Stress. IEEE Transactions on Power Electronics, 2021, 36 (7), pp.7442-7450. ⟨10.1109/TPEL.2020.3042133⟩. ⟨hal-03174499⟩

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