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Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

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https://hal-normandie-univ.archives-ouvertes.fr/hal-03174373
Contributor : pascal dherbecourt Connect in order to contact the contributor
Submitted on : Friday, March 19, 2021 - 10:34:16 AM
Last modification on : Wednesday, November 3, 2021 - 6:35:50 AM

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Wadia Jouha, Mohamed Lamine Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩

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