Skip to Main content Skip to Navigation
Journal articles

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Document type :
Journal articles
Complete list of metadata

https://hal-normandie-univ.archives-ouvertes.fr/hal-03174373
Contributor : Pascal Dherbecourt <>
Submitted on : Friday, March 19, 2021 - 10:34:16 AM
Last modification on : Saturday, March 20, 2021 - 3:19:03 AM

Identifiers

Citation

Wadia Jouha, Mohamed Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩

Share

Metrics

Record views

18