Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics - Archive ouverte HAL

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Journal Articles IEEE Transactions on Device and Materials Reliability Year : 2020

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

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Wadia Jouha

Function : Author
PersonId : 1174960

Groupe de physique des matériaux

Mohamed Lamine Masmoudi

Function : Author
PersonId : 175174
IdHAL : mohamed-masmoudi
IdRef : 158684656

Groupe de physique des matériaux

Ahmed El Oualkadi

Function : Author

Laboratoire des Technologies de l'Information et de la Communication

Eric Joubert

Function : Author
PersonId : 175065
IdHAL : eric-joubert
ORCID : 0000-0001-6585-4603
IdRef : 083021450

Groupe de physique des matériaux

Pascal Dherbécourt

Function : Author
PersonId : 175161
IdHAL : pascal-dherbecourt
ORCID : 0000-0001-9110-358X
IdRef : 069275483

Groupe de physique des matériaux

Domains

Engineering Sciences [physics] Physics [physics]

pascal dherbecourt : Connect in order to contact the contributor

https://hal-normandie-univ.archives-ouvertes.fr/hal-03174373

Submitted on : Friday, March 19, 2021-10:34:16 AM

Last modification on : Friday, March 24, 2023-2:53:21 PM

Dates and versions

hal-03174373 , version 1 (19-03-2021)

Identifiers

HAL Id : hal-03174373 , version 1
DOI : 10.1109/TDMR.2020.2999029

Cite

Wadia Jouha, Mohamed Lamine Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics. IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-03174373⟩

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