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Correlation of luminescence measurements to the structural characterization of Pr3+-doped HfSiOx

Abstract : Luminescence and structural properties of Pr3+ doped HfSiOx thin layer elaborated by magnetron sputtering have been investigated as a function of the annealing temperature. The emission properties of Pr3+ ions were studied using photoluminescence (PL) and cathodoluminescence (CL) spectroscopies. Phase separation between amor- phous SiO2 and crystallized HfO2 nano-grains occurring in the HfSiOx matrix has been investigated by atom probe tomography and transmission electron microscopy with particular consideration for the Pr distribution. Both PL and CL measurements evidenced a strong emission originating from Pr3+ ions in the visible range for an annealing temperature higher than 950◦C. At 950◦C, Pr3+ ions are clearly located in HfO2 nano-grains of cubic structure. Regarding PL, no significant changes are observed between 950◦C and 1050◦C. However, CL mea- surements revealed new emission peaks in the infrared range after an annealing at 1050◦C, corresponding to the appearance of a new orthorhombic crystalline structure of HfO2 nano-grains in the thin layer. The CL signal evolution as a function of the annealing treatment is discussed in regard to the evolution of structural properties.
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Contributor : Etienne Talbot Connect in order to contact the contributor
Submitted on : Friday, October 8, 2021 - 4:52:32 PM
Last modification on : Saturday, June 25, 2022 - 9:57:01 AM
Long-term archiving on: : Sunday, January 9, 2022 - 8:09:44 PM


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R. Demoulin, L. Khomenkova, C. Labbe, F. Gourbilleau, Celia Castro, et al.. Correlation of luminescence measurements to the structural characterization of Pr3+-doped HfSiOx. Journal of Luminescence, Elsevier, 2021, 235, pp.118004. ⟨10.1016/j.jlumin.2021.118004⟩. ⟨hal-03164169⟩



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