Magnetization Dynamics in Co2MnGe/Al2O3/Co Tunnel Junctions Grown on Different Substrates
Résumé
We study static and dynamic magnetic properties of Co2MnGe (13 nm)/Al2O3 (3 nm)/Co (13 nm) tunnel magnetic junctions, deposited on various single crystalline substrates (a-plane sapphire, MgO(100), Si(111)). The results are compared to the magnetic properties of Co and of Co2MnGe single films lying on sapphire substrates. X-rays diffraction always shows (110) orientation of the Co2MnGe films. Structural observations obtained by high resolution transmission electron microscopy confirmed the high quality of the tunnel magnetic junction grown on sapphire. Our vibrating sample magnetometry measurements reveal in-plane anisotropy only in samples grown on a sapphire substrate. Depending on the substrate, the ferromagnetic resonance spectra of the tunnel magnetic junctions, studied by the microstrip technique, show one or two pseudo-uniform modes. In the case of MgO and of Si substrates only one mode is observed: it is described by magnetic parameters (g-factor, effective magnetization, in-plane magnetic anisotropy) derived in the frame of a simple expression of the magnetic energy density; these parameters are practically identical to those obtained for the Co single film. With a sapphire substrate two modes are present: one of them does not appreciably differ from the observed mode in the Co single film while the other one is similar to the mode appearing in the Co2MnGe single film: their magnetic parameters can thus be determined independently, using a classical model for the energy density in the absence of interlayer exchange coupling.