Probing the origins of magnetism in 2 at% Fe-implanted 4H-SiC

Leifeng Zhang (1) , Lindor Diallo (1) , Abdeslem Fnidiki (1) , Luc Lechevallier (1) , Alain Declemy (2) , Williams Lefebvre (1) , Jean Juraszek (1)

1 GPM - Groupe de physique des matériaux
2 PDP - Physique des Défauts et de la Plasticité [Institut Pprime]

Here we reported an about 2 at.% Fe-implanted p-type 4H-SiC Diluted Magnetic Semiconductor (DMS). Scanning Transmission Electron Microscopy (STEM) and Atom Probe Tomography (APT) techniques were used to investigate the origins of ferromagnetic behavior. Nanoparticles (1–9 nm) were identified to be Fe3Si, Fe2Si, Fe5Si3, Fe3Si2, FeSi and FeSi2 phases, the distribution of which is related to Fe distribution. The magnetic properties were studied by Conversion Electron Mössbauer Spectroscopy (CEMS) and Superconducting Quantum Interference Device (SQUID) techniques. The contributions of these Fe-silicides to the ferromagnetism are thus discussed from a quantitative perspective.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Leifeng Zhang, Lindor Diallo, Abdeslem Fnidiki, Luc Lechevallier, Alain Declemy, et al.. Probing the origins of magnetism in 2 at% Fe-implanted 4H-SiC. Scripta Materialia, 2020, 188, pp.157-163. ⟨10.1016/j.scriptamat.2020.07.030⟩. ⟨hal-02922644⟩