SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition

L. Yan (1) , Z. Xu (1) , C. Grygiel (1) , S. Mcmitchell (1) , M. Suchomel (2, 1) , J. Bacsa (1) , J. Clark (1) , H. Niu (1) , S. Romani (1) , R. Palgrave (1) , P. Chalker (1) , M. Rosseinsky (1)

1 University of Liverpool
2 APS - Advanced Photon Source [ANL]

Domains: Physics [physics]; Condensed Matter [cond-mat]; Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Physics [physics]; High Energy Physics - Experiment [hep-ex]; Chemical Sciences; Cristallography; Chemical Sciences; Inorganic chemistry; Chemical Sciences; Material chemistry; Physics [physics]; Condensed Matter [cond-mat]; Strongly Correlated Electrons [cond-mat.str-el]; Engineering Sciences [physics]; Materials

L. Yan, Z. Xu, C. Grygiel, S. Mcmitchell, M. Suchomel, et al.. SrHf0.67Ti0.33O3 high-k films deposited on Si by pulsed laser deposition. Applied physics. A, Materials science & processing, 2011, 104 (1), pp.447-451. ⟨10.1007/s00339-011-6257-8⟩. ⟨hal-02887893⟩