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Physical Study of SiC Power MOSFETs Towards HTRB Stress Based On C-V Characteristics

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02747508
Contributor : Pascal Dherbecourt <>
Submitted on : Wednesday, June 3, 2020 - 12:00:30 PM
Last modification on : Thursday, June 4, 2020 - 3:45:09 AM

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Wadia Jouha, Mohamed Masmoudi, Ahmed El Oualkadi, Eric Joubert, Pascal Dherbécourt. Physical Study of SiC Power MOSFETs Towards HTRB Stress Based On C-V Characteristics. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, In press, pp.1-1. ⟨10.1109/TDMR.2020.2999029⟩. ⟨hal-02747508⟩

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