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Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor

L. Diallo 1 A. Fnidiki 1 L. Lechevallier 1 J. Juraszek 1 M. Viret 2 M. Marteau 3 D. Eyidi 3 A. Declemy 3
2 LNO - Laboratoire Nano-Magnétisme et Oxydes
SPEC - UMR3680 - Service de physique de l'état condensé, IRAMIS - Institut Rayonnement Matière de Saclay
Abstract : p-doped 4H-SiC substrates were implanted with 57Fe ions at energies ranging from 30 to 160 keV and subjected to a rapid thermal annealing in order to produce a homogeneous Fe concentration inside a 100 nm-thick region in the semiconducting SiC material. Using 57Fe Conversion Electron Mössbauer Spectrometry and Superconducting Quantum Interference Device magnetometry, we give evidence that the ferromagnetism obtained in SiC implanted with a 57Fe atoms concentration close to 2% is not only due to the formation of some Fe–Si magnetic nanoparticles but also originates from magnetic Fe atoms diluted in the matrix of the semiconductor. So, values of Fe atoms magnetizations contained in nanoparticles and Fe atoms diluted in the matrix and the Curie temperatures associated with the nanoparticles and to the matrix have been determined.
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Submitted on : Sunday, May 10, 2020 - 6:38:36 PM
Last modification on : Friday, November 27, 2020 - 10:22:03 AM



L. Diallo, A. Fnidiki, L. Lechevallier, J. Juraszek, M. Viret, et al.. Origin of the magnetic properties of Fe-implanted 4H-SiC semiconductor. Journal of Applied Physics, American Institute of Physics, 2020, 127 (18), pp.183901. ⟨10.1063/5.0005061⟩. ⟨hal-02568971⟩



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