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Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET

Abstract : Combined effects of electrical stress and neutron irradiation of the last generation of commercial discrete silicon carbide power MOSFETs are studied. The Single Event Burnout (SEB) sensitivity during neutron irradiation is analyzed for unstressed and electrically stressed devices. For surviving devices, a comprehensive study of the breakdown voltage degradation is performed by coupling electrical stress and irradiation effects. In addition, mutual influences between electrical stress and radiative constraints are investigated through TCAD modeling.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02533100
Contributor : Rosine Coq Germanicus <>
Submitted on : Monday, April 6, 2020 - 11:27:30 AM
Last modification on : Thursday, June 18, 2020 - 7:42:02 AM

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K. Niskanen, A. Touboul, R. Coq Germanicus, A. Michez, Frédéric Wrobel, et al.. Impact of electrical stress and neutron irradiation on reliability of silicon carbide power MOSFET. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2020, pp.1-1. ⟨10.1109/TNS.2020.2983599⟩. ⟨hal-02533100⟩

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