ELECTRONIC SCATTERING IN AN N-TYPE SEMICONDUCTOR UNDER A DC MAGNETIC FIELD

M. Abdelaoui (1) , Malika Idrissi (2, 3) , Mohamed Benzohra (4, 3)

1 Université d'Adrar [Adrar, Algeria]
2 UNIROUEN - Université de Rouen Normandie
3 GPM - Groupe de physique des matériaux
4 AMME-LECAP EA 4528 International Laboratory - Laboratoire d’Etude et de Caractérisation des Amorphes et des Polymères

In this paper, we are presenting a theoretical study that was carried out in order to highlight the impact of a transverse magnetic field on the conduction mechanisms in an N-type semiconductor. In the calculations, we have made two different geometrical assumptions for the semiconductor under a weak magnetic field: firstly an unlimited configuration and secondly a limited configuration. The results of this study show on one hand, under a constant bias, the current variations through the N-type semiconductor are basically related to the impact of the magnetic field on the carriers movement within the semiconductor. On the other hand, considering the two geometrical assumptions mentioned above, the electrons scattering coefficient was found to be decreasing when applying a given magnetic field. Moreover, the law that quantifies such phenomenon was found to be quadratic. Due to the Hall effect, this variation is stronger in the case of a limited semiconductor, in comparison to the case of an unlimited semiconductor.

Mots clés: Magnetic field; Hall effect; N-type semiconductor; Electron scattering

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Electronique

M. Abdelaoui, Malika Idrissi, Mohamed Benzohra. ELECTRONIC SCATTERING IN AN N-TYPE SEMICONDUCTOR UNDER A DC MAGNETIC FIELD. African Review of Science, Technology and Development, 2016, 1 (2), pp.18-27. ⟨hal-02443665⟩