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Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02421118
Contributor : Zouheir Riah <>
Submitted on : Friday, December 20, 2019 - 11:49:41 AM
Last modification on : Monday, September 28, 2020 - 3:13:58 PM

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  • HAL Id : hal-02421118, version 1

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Ali Alhoussein, Hadi Alawieh, Zouheir Riah, Yacine Azzouz. Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data. PCIM Europe Conference 2020 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management., May 2020, NürnbergMesse, Germany. ⟨hal-02421118⟩

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