Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data

Ali Alhoussein; Hadi Alawieh; Zouheir Riah; Yacine Azzouz

Conference Papers Year :

Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data

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Ali Alhoussein

Function : Author

Pôle Electronique et Systèmes

Hadi Alawieh

Function : Author

Institut de Recherche en Systèmes Electroniques Embarqués

Zouheir Riah

Function : Author
PersonId : 177853
IdHAL : zouheir-riah
IdRef : 088663213

Pôle Electronique et Systèmes

École Supérieure d’Ingénieurs en Génie Électrique

Yacine Azzouz

Function : Author
PersonId : 180703
IdHAL : yacine-azzouz
IdRef : 060770899

Pôle Electronique et Systèmes

Domains

Engineering Sciences [physics] Electronics Engineering Sciences [physics] Electric power

Zouheir riah : Connect in order to contact the contributor

https://hal-normandie-univ.archives-ouvertes.fr/hal-02421118

Submitted on : Friday, December 20, 2019-11:49:41 AM

Last modification on : Thursday, March 10, 2022-10:46:02 AM

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hal-02421118 , version 1 (20-12-2019)

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HAL Id : hal-02421118 , version 1

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Ali Alhoussein, Hadi Alawieh, Zouheir Riah, Yacine Azzouz. Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data. PCIM Europe Conference 2020 : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management., May 2020, NürnbergMesse, Germany. ⟨hal-02421118⟩

Parametric Optimisation of New SiC Power MOSFET Model Using Experimental Performance Data

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