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A New SiC Power MOSFET Model With a Parameter Optimization Procedure

Ali Alhoussein 1 Hadi Alawieh 2 Z. Riah 1, 3 yacine Azzouz 1 
1 Pôle Electronique et Systèmes
IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués
2 IRSEEM - Institut de Recherche en Systèmes Electroniques Embarqués
3 ESIGELEC - École Supérieure d’Ingénieurs en Génie Électrique
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Conference papers
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02419913
Contributor : Zouheir riah Connect in order to contact the contributor
Submitted on : Thursday, December 19, 2019 - 4:18:34 PM
Last modification on : Thursday, March 10, 2022 - 10:46:02 AM

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COMUE-NORMANDIE | IRSEEM | UNIROUEN | ESIGELEC

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Ali Alhoussein, Hadi Alawieh, Z. Riah, yacine Azzouz. A New SiC Power MOSFET Model With a Parameter Optimization Procedure. 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Sep 2019, Genova, Italy. pp.P.1-P.11, ⟨10.23919/EPE.2019.8915569⟩. ⟨hal-02419913⟩

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