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A New SiC Power MOSFET Model With a Parameter Optimization Procedure

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Engineering Sciences [physics] Electronics Engineering Sciences [physics] Electromagnetism Engineering Sciences [physics] Electric power

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02419913

Submitted on : Thursday, December 19, 2019-4:18:34 PM

Last modification on : Thursday, March 10, 2022-10:46:02 AM

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hal-02419913 , version 1 (19-12-2019)

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Ali Alhoussein, Hadi Alawieh, Z. Riah, Yacine Azzouz. A New SiC Power MOSFET Model With a Parameter Optimization Procedure. 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Sep 2019, Genova, Italy. pp.P.1-P.11, ⟨10.23919/EPE.2019.8915569⟩. ⟨hal-02419913⟩

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