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Behavoir study of a 600v gan transistor under short-circuit experimental test

Jian Zhi Fu
  • Function : Author
Institut de Recherche en Systèmes Electroniques Embarqués
Francois Fouquet
Pôle Electronique et Systèmes
Moncef Kadi
Pôle Electronique et Systèmes
CV
Pascal Dherbécourt
Groupe de physique des matériaux
CV

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Engineering Sciences [physics] Engineering Sciences [physics] Electric power Engineering Sciences [physics] Electronics

Moncef KADI  : Connect in order to contact the contributor

https://hal-normandie-univ.archives-ouvertes.fr/hal-02310344

Submitted on : Thursday, October 10, 2019-9:54:07 AM

Last modification on : Friday, March 24, 2023-2:53:12 PM

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hal-02310344 , version 1 (10-10-2019)

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  • HAL Id : hal-02310344 , version 1

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Jian Zhi Fu, Francois Fouquet, Moncef Kadi, Pascal Dherbécourt. Behavoir study of a 600v gan transistor under short-circuit experimental test. TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco. ⟨hal-02310344⟩

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