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Behavoir study of a 600v gan transistor under short-circuit experimental test

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02310344
Contributor : Moncef Kadi <>
Submitted on : Thursday, October 10, 2019 - 9:54:07 AM
Last modification on : Tuesday, September 8, 2020 - 1:43:35 PM

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  • HAL Id : hal-02310344, version 1

Citation

Jian Zhi Fu, Francois Fouquet, Moncef Kadi, Pascal Dherbécourt. Behavoir study of a 600v gan transistor under short-circuit experimental test. TELECOM 2017 et 10ème JFMMA, May 2017, Rabat, Morocco. ⟨hal-02310344⟩

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