Influence of flexoelectricity on the spin cycloid in (110)-oriented BiFe O 3 films

D. Sando (1, 2) , F. Appert (3) , S. Burns (2) , Q. Zhang (4) , Y. Gallais (5) , A. Sacuto (5) , M. Cazayous (5) , V. Garcia (6) , S. Fusil (6) , C. Carretero (6) , Jean-Marie Le Breton (3) , A. Barthelemy (6) , M. Bibes (6) , J. Juraszek (3) , V. Nagarajan (2)

1 UNSW - Mark Wainwright Analytical Centre [Sydney]
2 School of Materials Science and Engineering
3 GPM - Groupe de physique des matériaux
4 ANL - Argonne National Laboratory [Lemont]
5 MPQ (UMR_7162) - Laboratoire Matériaux et Phénomènes Quantiques
6 UMPhy CNRS/THALES - Unité mixte de physique CNRS/Thales

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

D. Sando, F. Appert, S. Burns, Q. Zhang, Y. Gallais, et al.. Influence of flexoelectricity on the spin cycloid in (110)-oriented BiFe O 3 films. Physical Review Materials, 2019, 3 (10), ⟨10.1103/PhysRevMaterials.3.104404⟩. ⟨hal-02310230⟩