Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress - Archive ouverte HAL Access content directly
Journal Articles Semiconductor Science and Technology Year : 2011

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hal-02308187 , version 1 (08-10-2019)

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A Alaeddine, C. Genevois, Moncef Kadi, F. Cuvilly, K. Daoud. Degradation of Au–Ti contacts of SiGe HBTs during electromagnetic field stress. Semiconductor Science and Technology, 2011, 26 (2), pp.025003. ⟨10.1088/0268-1242/26/2/025003⟩. ⟨hal-02308187⟩
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