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Performance and structure degradations of SiGe HBT after electromagnetic field stress

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02307309
Contributor : Moncef Kadi <>
Submitted on : Monday, October 7, 2019 - 2:44:43 PM
Last modification on : Tuesday, September 8, 2020 - 2:12:15 PM

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A. Alaeddine, Moncef Kadi, K. Daoud. Performance and structure degradations of SiGe HBT after electromagnetic field stress. 2011 IEEE International Reliability Physics Symposium (IRPS), Apr 2011, Monterey, United States. pp.CD.1.1-CD.1.6, ⟨10.1109/IRPS.2011.5784555⟩. ⟨hal-02307309⟩

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