Journal Articles
Microelectronics Reliability
Year : 2009
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306966
Submitted on : Monday, October 7, 2019-11:07:29 AM
Last modification on : Wednesday, February 8, 2023-5:11:09 PM
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- HAL Id : hal-02306966 , version 1
- DOI : 10.1016/j.microrel.2009.07.014
Cite
A. Alaeddine, Moncef Kadi, K. Daoud, B. Mazari. Effects of electromagnetic near-field stress on SiGe HBT’s reliability. Microelectronics Reliability, 2009, 49 (9-11), pp.1029-1032. ⟨10.1016/j.microrel.2009.07.014⟩. ⟨hal-02306966⟩
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