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Effects of electromagnetic near-field stress on SiGe HBT’s reliability

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306966
Contributor : Moncef Kadi <>
Submitted on : Monday, October 7, 2019 - 11:07:29 AM
Last modification on : Wednesday, October 9, 2019 - 1:37:29 AM

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A. Alaeddine, Moncef Kadi, K. Daoud, B. Mazari. Effects of electromagnetic near-field stress on SiGe HBT’s reliability. Microelectronics Reliability, Elsevier, 2009, 49 (9-11), pp.1029-1032. ⟨10.1016/j.microrel.2009.07.014⟩. ⟨hal-02306966⟩

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