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Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306952
Contributor : Moncef Kadi <>
Submitted on : Monday, October 7, 2019 - 11:02:11 AM
Last modification on : Wednesday, July 15, 2020 - 11:52:04 AM

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Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline. Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance. International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2009, 1 (6), pp.475-482. ⟨10.1017/S1759078709990572⟩. ⟨hal-02306952⟩

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