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Journal Articles International Journal of Microwave and Wireless Technologies Year : 2009

Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance

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Physics [physics] Engineering Sciences [physics]

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306952

Submitted on : Monday, October 7, 2019-11:02:11 AM

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hal-02306952 , version 1 (07-10-2019)

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Ali Alaeddine, Moncef Kadi, Kaouther Daoud, Hichame Maanane, Philippe Eudeline. Study of electromagnetic field stress impact on SiGe heterojunction bipolar transistor performance. International Journal of Microwave and Wireless Technologies, 2009, 1 (6), pp.475-482. ⟨10.1017/S1759078709990572⟩. ⟨hal-02306952⟩

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