Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

S. Khemiri; Moncef Kadi; A. Louis

doi:10.1016/j.microrel.2011.07.074

Journal Articles Microelectronics Reliability Year : 2011

Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

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S. Khemiri

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Institut de Recherche en Systèmes Electroniques Embarqués

Moncef Kadi

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IdHAL : moncef-kadi
IdRef : 084533242

Institut de Recherche en Systèmes Electroniques Embarqués

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A. Louis

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Physics [physics] Engineering Sciences [physics]

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306934

Submitted on : Monday, October 7, 2019-10:51:49 AM

Last modification on : Thursday, March 10, 2022-10:46:02 AM

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hal-02306934 , version 1 (07-10-2019)

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HAL Id : hal-02306934 , version 1
DOI : 10.1016/j.microrel.2011.07.074

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S. Khemiri, Moncef Kadi, A. Louis. Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress. Microelectronics Reliability, 2011, 51 (9-11), pp.1783-1787. ⟨10.1016/j.microrel.2011.07.074⟩. ⟨hal-02306934⟩

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Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

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