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Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02306934
Contributor : Moncef Kadi <>
Submitted on : Monday, October 7, 2019 - 10:51:49 AM
Last modification on : Wednesday, October 9, 2019 - 1:37:29 AM

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S. Khemiri, Moncef Kadi, A. Louis. Reliability study of AlGaN/GaN HEMT under electromagnetic, RF and DC stress. Microelectronics Reliability, Elsevier, 2011, 51 (9-11), pp.1783-1787. ⟨10.1016/j.microrel.2011.07.074⟩. ⟨hal-02306934⟩

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