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Radiated EMI evolution of power SiC MOSFET in a boost converter after short-circuit aging tests

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https://hal-normandie-univ.archives-ouvertes.fr/hal-02305454
Contributor : Moncef Kadi Connect in order to contact the contributor
Submitted on : Friday, October 4, 2019 - 11:07:36 AM
Last modification on : Thursday, March 10, 2022 - 10:46:02 AM

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Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama. Radiated EMI evolution of power SiC MOSFET in a boost converter after short-circuit aging tests. Microelectronics Reliability, Elsevier, 2019, pp.113398. ⟨10.1016/j.microrel.2019.113398⟩. ⟨hal-02305454⟩

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