Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cell

Abstract : Goal : Improve the efficiency of Si solar cells by down converter layer  Decrease the thermalization losses due to the spectral mismatch between the solar irradiance and the Si absorption  Use the optical properties of rare earth ions embedded in a Si-based matrix to do Down-conversion (DC) Integration in industrial Si solar cell Fabrication parameters: Depositions parameters: Deposition Temperature , T dp (°C) Plasma Pressure, P tot (sccm) Gaz : Argon and nitrogen Nitrogen rate, rN 2 RF Power density on target, P target (W/cm²) Depositing time, t dp (s) Annealing with rapid or slow ramp of T under specific gas (N 2 , Forming…) PHC France-Taiwan ORCHID. Targets Rotation Heating lamp Radio-frequency Power (PRF) SiO 2 Water-cooled Water-cooled Water-cooled Water-cooled Water-cooled Water-cooled Substrate Gas Argon Argon Plasma Magnets Target Shutter M.PII.11 Conclusion  Fabrication of Tb/Yb-doped SiN x homogenous and multilayer films->DC optimized films  Modeling of the DC interaction exchange for both kind of films-> Aggregation of rare earth ions is prevented in multilayer  Homogenous and multilayer DC layers integrated in Si solar cell-> Homogenous DC layer lead to relative Si solar cell efficiency increase of 1.34% Introduction confocal magnetron sputtering Si based doped with rare earth ions luminescent layer: SiNx-Tb 3+ [PHOTOLUMINESCENCE] Control of refractive index by tuning the sputtering parameters : SiN x [ELLIPSOMETRY] Brewster LO 1120 cm-1 TO 840 cm-1 Amorphous and homogenous films: SiN x [HRTEM] Control of the stoichiometry by tuning the sputtering parameters: SiN x [FTIR] Structural and physical characterization Monte Carlo Modeling K CET distance dependent and therefore function of concentration [Tb 3+ ] and [Yb 3+ ] and their distribution Two kinds of Tb 3+-Yb 3+ co-doped thin films fabricated homogenous and multilayer Multilayer prevent aggregation quenching and allow therefore higher doping rate Relative increase by 1.34% in the solar cell conversion efficiency E-Ton Solar (Taiwan) Pseudo I-V curves for three c-Si solar cells with SiN x , SiN x :Tb 3+ and SiN x :Tb 3+-Yb 3+ layers, respectively. Reflectance of three layers deposited on textured emitters
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02301126
Contributeur : Julien Cardin <>
Soumis le : lundi 30 septembre 2019 - 11:25:05
Dernière modification le : jeudi 3 octobre 2019 - 01:25:58

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  • HAL Id : hal-02301126, version 1

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Julien Cardin, L. Dumont, Christophe Labbe, P.-M. Anglade, Cédric Frilay, et al.. Integration of rare earth ions doped Si based down converter layers in an industrial Si solar cell. E-MRS fall meeting 2019, Sep 2019, Varsovie, Poland. ⟨hal-02301126⟩

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