Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2

Rémi DEMOULIN (1) , M. Roussel (1) , S. Duguay (1) , D. Muller (2) , D. Mathiot (2) , P. Pareige (1) , Etienne Talbot (1)

1 GPM - Groupe de physique des matériaux
2 ICube - Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]

Rémi DEMOULIN, M. Roussel, S. Duguay, D. Muller, D. Mathiot, et al.. Characterization of p-type Doping in Silicon Nanocrystals Embedded in SiO 2. Microscopy & Microanalysis 2019, Aug 2019, Portland, United States. pp.2540-2541, ⟨10.1017/S1431927619013436⟩. ⟨hal-02294165⟩