In2 03 :Ge, a promising n-type thermoelectric oxide composite

Abstract : We have studied the chemical, structural and transport properties of a series of In2O3 based samples with germanium doping (from 0 to 15 atom%). X-ray diffraction and scanning electron microscopy studies show that the solubility limit of Ge in In2O3 is very small and that additions of more than about 0.5 atom% Ge lead to the presence of In2Ge2O7 inclusions. The electrical conductivity is strongly enhanced by Ge doping with best values exceeding 1200 S cm−1 at room temperature. On the other hand, the thermopower decreases with Ge addition, but the thermoelectric power factor remains higher than that of undoped In2O3 and is close to 1 mW m−1 K−2 at 1100 K in In1.985Ge0.015O3. The thermal conductivity is strongly reduced by Ge additions. The dimensionless figure of merit ZT reaches 0.1 at 1273 K in In2O3 and exceeds 0.45 at 1273 K in composite compounds with nominal composition In1.8Ge0.2O3.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02264242
Contributeur : Elisabeth van T Hof <>
Soumis le : mardi 6 août 2019 - 15:03:41
Dernière modification le : samedi 28 septembre 2019 - 01:00:43

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David Bérardan, Emmanuel Guilmeau, Antoine Maignan, Bernard Raveau. In2 03 :Ge, a promising n-type thermoelectric oxide composite. Solid State Communications, Elsevier, 2008, 146 (1-2), pp.97-101. ⟨10.1016/j.ssc.2007.12.033⟩. ⟨hal-02264242⟩

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