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ZrSe 3 -Type Variant of TiS 3 : Structure and Thermoelectric Properties

Abstract : A dense TiS3 sample has been processed by Spark Plasma Sintering. The structural analysis, obtained by coupling powder X-ray diffraction and transmission electron microscopy (TEM), shows that the A-variant of the ZrSe3-type structure is stabilized for the first time. Defects along the main atomic layer stacking directions are evidenced by high-resolution TEM, which explain the peculiar X-ray powder diffraction patterns, with strongly anisotropic microstrains. The presence of these structural defects might explain the existence of a metal-to-insulator transition with a charge localization below TMI ≈ 325 K. Large absolute values of the Seebeck coefficient, in the range −700 ≤ S ≤ −600 μV·K–1, are observed for 100 ≤ T ≤ 600 K, together with a low thermal conductivity, κ = 2 W·K–1·m–1 at 600 K. The T–1 dependence of the lattice part of κ indicates its phononic character. As the charge carrier concentration measured by Hall effect is too low, n = 1.24 × 1018 cm–3, extra doping would be necessary to decrease its too high electrical resistivity (ρ300K ∼ 1.4 Ω·cm) for thermoelectric applications.
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Contributor : Elisabeth VAN T HOF Connect in order to contact the contributor
Submitted on : Tuesday, August 6, 2019 - 10:43:01 AM
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Emmanuel Guilmeau, David Berthebaud, Patrick Misse, Sylvie Hebert, Oleg Lebedev, et al.. ZrSe 3 -Type Variant of TiS 3 : Structure and Thermoelectric Properties. Chemistry of Materials, American Chemical Society, 2014, 26 (19), pp.5585-5591. ⟨10.1021/cm502069n⟩. ⟨hal-02264025⟩



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