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Low-Temperature Fracture Strength of MgB 2 Bulk Processed by Spark Plasma Sintering

A. Murakami 1 J. Noudem 2, 3 Z. Guesmi 4 A. Iwamoto 5
1 NICT - National Institute of Information and Communications Technology [Tokyo, Japan]
2 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
3 LUSAC - Laboratoire Universitaire des Sciences Appliquées de Cherbourg
4 ULCO - Université du Littoral Côte d'Opale
5 NIFS - National Institute for Fusion Science
Abstract : Mechanical properties of a high packing ratio MgB 2 bulk sample processed by spark plasma sintering (SPS) were evaluated at 77 K through bending tests for specimens cut from the bulk sample. The effects of the packing ratio and temperature on the fracture strength of MgB 2 bulk are discussed. The fracture strength at 77 K of the MgB 2 bulk processed by SPS was higher than that at room temperature. The packing ratio of the MgB 2 bulk processed by SPS was higher than those of other MgB 2 bulks processed by sintering under the ambient pressure and hot isostatic pressing. The fracture strength was improved by increasing the packing ratio. The fracture strength at a very low temperature was estimated from the bending test results at 77 K and room temperature. The fracture strength at 20 K of the MgB 2 bulk processed by SPS was estimated to be around 425 MPa. © 2015 IEEE.
Keywords : Mechanical properties Fracture strength Bulk material Loading MgB2 Spark plasma sintering Plasma materials processing Sintering Type II superconductors Magnesium compounds Hot pressing Fracture Bending Temperature Magnetic fields Hip Superconducting materials Pressing Plasma temperature
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Submitted on : Tuesday, July 16, 2019 - 11:32:21 AM
Last modification on : Tuesday, May 10, 2022 - 10:44:30 AM

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COMUE-NORMANDIE | CRISMAT | ENSICAEN | UNIV-LITTORAL | CNRS | UNICAEN | LUSAC | INC-CNRS

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A. Murakami, J. Noudem, Z. Guesmi, A. Iwamoto. Low-Temperature Fracture Strength of MgB 2 Bulk Processed by Spark Plasma Sintering. IEEE Transactions on Applied Superconductivity, Institute of Electrical and Electronics Engineers, 2016, 26 (3), pp.7433961. ⟨10.1109/TASC.2016.2542248⟩. ⟨hal-02184752⟩

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