The BiCu1−xOS oxysulfide Copper deficiency and electronic properties

Abstract : An oxysulfide series of nominal compositions BiCu1−xOS with xandlt;0.20 has been prepared and its structural properties characterized by combining powder X-ray diffraction and transmission electron microscopy techniques. It is found that this oxysulfide, crystallizing in the P4/nmm space group, tends to adopt a constant amount of copper vacancy corresponding to x=0.05 in the BiCu1−xOS formula. The presence of Cu vacancies is confirmed by HAADF-STEM analysis showing, in the Cu atomic columns, alternating peaks of different intensities in some very localized regions. For larger Cu deficiencies (xandgt;0.05 in the nominal composition), other types of structural nanodefects are evidenced such as bismuth oxysulfides of the “BiOS” ternary system which might explain the report of superconductivity for the BiCu1−xOS oxysulfide. Local epitaxial growth of the BiCuOS oxysulfide on top of CuO is also observed. In marked contrast to the BiCu1−xOSe oxyselenide, these results give an explanation to the limited impact of Cu deficiency on the Seebeck coefficient in BiCu1−xOS compounds. © 2016 Elsevier Inc.
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02184730
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Soumis le : mardi 16 juillet 2019 - 11:31:00
Dernière modification le : mercredi 17 juillet 2019 - 01:53:31

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D. Berthebaud, E. Guilmeau, O.I. Lebedev, A. Maignan, J. Gamon, et al.. The BiCu1−xOS oxysulfide Copper deficiency and electronic properties. Journal of Solid State Chemistry, 2016, 237, pp.292-299. ⟨10.1016/j.jssc.2016.02.033⟩. ⟨hal-02184730⟩

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