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Study of the impact of h+ mobile ions on RF performances of PECVD TEOS silicon dioxide deposited at low temperature
Abstract : In this paper, we study the impact of H+ mobile ions on Radio Frequency (RF) performances of silicon dioxide deposited by Plasma Enhanced ChemicalVapor Deposition (PECVD) at lowtemperature (200°C), using a tetraethylorthosilicate (TEOS)-oxygenmixture as gas precursor. The presence of H+ ions within the dielectric is related to the low temperature deposition of the dielectric combined with exposition to moisture; the phenomenon is proven with Fourier Transform Infrared Spectroscopy (FTIR) and electrical methods as Transient Voltage Sweep (TVS) and C-V (capacitance-voltage) experiments on MOS (Metal Oxide Semiconductor) capacitors. A CoPlanarWaveguide (CPW) structure is employed to evaluate the RF behavior of the dielectric. It will be shown that the variation of CPW characteristics such as line loss (α) and characteristic impedance (Zc) is due to the interaction between the H+ ions and the substrate. © 2016 The Electrochemical Society.
Keywords :
Capacitance
Deposition
Fourier transform infrared spectroscopy
Ionic conduction
Ions
Low-k dielectric
Metals
MOS devices
Oxide semiconductors
Silica
Capacitance voltage
Characteristic impedance
Electrical methods
Low-temperature deposition
Metal oxide semiconductor
Radio frequencies
Tetraethyl orthosilicates
Transient voltage
Temperature
https://hal-normandie-univ.archives-ouvertes.fr/hal-02184710
Contributeur : Université Normandie <>
Soumis le : mardi 16 juillet 2019 - 11:29:55
Dernière modification le : mercredi 14 août 2019 - 17:16:01
Contributeur : Université Normandie <>
Soumis le : mardi 16 juillet 2019 - 11:29:55
Dernière modification le : mercredi 14 août 2019 - 17:16:01
