Study of the impact of h+ mobile ions on RF performances of PECVD TEOS silicon dioxide deposited at low temperature

A.P. Nguyen (1) , U. Lüders (1) , F. Voiron (2)

1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
2 IPDiA

In this paper, we study the impact of H+ mobile ions on Radio Frequency (RF) performances of silicon dioxide deposited by Plasma Enhanced ChemicalVapor Deposition (PECVD) at lowtemperature (200°C), using a tetraethylorthosilicate (TEOS)-oxygenmixture as gas precursor. The presence of H+ ions within the dielectric is related to the low temperature deposition of the dielectric combined with exposition to moisture; the phenomenon is proven with Fourier Transform Infrared Spectroscopy (FTIR) and electrical methods as Transient Voltage Sweep (TVS) and C-V (capacitance-voltage) experiments on MOS (Metal Oxide Semiconductor) capacitors. A CoPlanarWaveguide (CPW) structure is employed to evaluate the RF behavior of the dielectric. It will be shown that the variation of CPW characteristics such as line loss (α) and characteristic impedance (Zc) is due to the interaction between the H+ ions and the substrate. © 2016 The Electrochemical Society.

Keywords: Low-k dielectric; Metals; MOS devices; Oxide semiconductors; Silica; Capacitance voltage; Characteristic impedance; Electrical methods; Low-temperature deposition; Metal oxide semiconductor; Radio frequencies; Tetraethyl orthosilicates; Transient voltage; Temperature; Capacitance; Deposition; Fourier transform infrared spectroscopy; Ionic conduction; Ions

Domains: Chemical Sciences; Chemical Sciences; Cristallography; Chemical Sciences; Theoretical and/or physical chemistry; Chemical Sciences; Material chemistry

A.P. Nguyen, U. Lüders, F. Voiron. Study of the impact of h+ mobile ions on RF performances of PECVD TEOS silicon dioxide deposited at low temperature. ECS Journal of Solid State Science and Technology, 2016, 5 (10), pp.N77-N80. ⟨10.1149/2.0301610jss⟩. ⟨hal-02184710⟩