Hot carrier injection effect on threshold voltage of NMOSFETs

I. Lahbib (1, 2) , A. Doukkali (1, 2) , P. Martin (1, 2) , G. Imbert (3) , D. Raoulx (3)

1 ENSICAEN - École Nationale Supérieure d'Ingénieurs de Caen
2 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
3 NXP Semiconductors

In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method. © 2015 IEEE.

Keywords: Aging time; Hot carrier degradation; Reliability simulation; Threshold voltage extraction; Threshold voltage shift; Threshold voltage; Degradation; Aging; Stress; Transistors; Hot carriers; Reliability; MOSFET; Semiconductor device models; Semiconductor device relilability

Domains: Chemical Sciences; Chemical Sciences; Cristallography; Chemical Sciences; Material chemistry; Chemical Sciences; Theoretical and/or physical chemistry

I. Lahbib, A. Doukkali, P. Martin, G. Imbert, D. Raoulx. Hot carrier injection effect on threshold voltage of NMOSFETs. 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015, Lausanne, Switzerland. pp.164-167, ⟨10.1109/PRIME.2015.7251360⟩. ⟨hal-02184128⟩