Skip to Main content Skip to Navigation
New interface
Conference papers

Hot carrier injection effect on threshold voltage of NMOSFETs

Abstract : In this paper, Hot Carrier (HC) injection mechanism effect on NMOSFETs' Threshold Voltage (VTh) is examined. The purpose of this work is to predict VTh degradation, under DC hot carrier stress conditions, of NMOS transistors for different channel lengths and widths, using a simulation reliability tool owned by NXP semiconductors and validate simulation results with HC degradation model. VTh extraction is conducted using Constant Current (CC) threshold voltage method. © 2015 IEEE.
Complete list of metadata
Contributor : Elisabeth VAN T HOF Connect in order to contact the contributor
Submitted on : Monday, July 15, 2019 - 6:04:58 PM
Last modification on : Saturday, June 25, 2022 - 9:53:41 AM



I. Lahbib, A. Doukkali, P. Martin, G. Imbert, D. Raoulx. Hot carrier injection effect on threshold voltage of NMOSFETs. 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2015, Lausanne, Switzerland. pp.164-167, ⟨10.1109/PRIME.2015.7251360⟩. ⟨hal-02184128⟩



Record views