Magnetoelectric coupling in Pb(Zr,Ti)O 3 - Galfenol thin film heterostructures

J. More-Chevalier (1) , U. Lüders (1) , C. Cibert (1) , A. Nosov (2) , B. Domengès (1, 3) , R. Bouregba (1) , G. Poullain (1)

1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
2 UB RAS - Ural Branch of Russian Academy of Sciences
3 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs

Heterostructures of piezoelectric Pb(Zr,Ti)O 3 and magnetostrictive Galfenol were fabricated by sputtering and pulsed laser deposition on platinized Si substrates with the aim to induce a magnetoelectric coupling between the layers of the two materials. In this study, no intermediate layer was introduced between Pb(Zr 0.56 Ti 0.44 )O 3 and Galfenol in contrast to most of the previous thin films studies. The obtained magnetoelectric coupling constant is in the range of 6-7 V/(cm Oe), indicating that an undisturbed piezoelectric-magnetostrictive interface can outbalance small deteriorations of the ferroic properties of the active materials. © 2015 AIP Publishing LLC.

Mots clés: Lead; Magnetostrictive devices; Piezoelectricity; Pulsed laser deposition; Thin films; Active material; Ferroics; Galfenol thin films; Intermediate layers; Magnetoelectric couplings; Pb(Zr; Ti)O; Si substrates; Two-materials; Interfaces (materials)

Domaines: Chimie; Cristallographie; Matériaux; Chimie théorique et/ou physique

J. More-Chevalier, U. Lüders, C. Cibert, A. Nosov, B. Domengès, et al.. Magnetoelectric coupling in Pb(Zr,Ti)O 3 - Galfenol thin film heterostructures. Applied Physics Letters, 2015, 107 (25), pp.252903. ⟨10.1063/1.4938218⟩. ⟨hal-02184127⟩