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Magnetoelectric coupling in Pb(Zr,Ti)O 3 - Galfenol thin film heterostructures

J. More-Chevalier 1 U. Lüders 1 C. Cibert 1 A. Nosov 2 B. Domengès 1, 3 R. Bouregba 1 G. Poullain 1 
1 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
2 UB RAS - Ural Branch of Russian Academy of Sciences
3 LaMIPS - Laboratoire de Microélectronique et de Physique des Semiconducteurs
CRISMAT - Laboratoire de cristallographie et sciences des matériaux, NXP Semiconductors [France], Presto Engineering Europe
Abstract : Heterostructures of piezoelectric Pb(Zr,Ti)O 3 and magnetostrictive Galfenol were fabricated by sputtering and pulsed laser deposition on platinized Si substrates with the aim to induce a magnetoelectric coupling between the layers of the two materials. In this study, no intermediate layer was introduced between Pb(Zr 0.56 Ti 0.44 )O 3 and Galfenol in contrast to most of the previous thin films studies. The obtained magnetoelectric coupling constant is in the range of 6-7 V/(cm Oe), indicating that an undisturbed piezoelectric-magnetostrictive interface can outbalance small deteriorations of the ferroic properties of the active materials. © 2015 AIP Publishing LLC.
Keywords : Lead Magnetostrictive devices Piezoelectricity Pulsed laser deposition Thin films Active material Ferroics Galfenol thin films Intermediate layers Magnetoelectric couplings Pb(Zr Ti)O Si substrates Two-materials Interfaces (materials)
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https://hal-normandie-univ.archives-ouvertes.fr/hal-02184127
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Submitted on : Monday, July 15, 2019 - 6:04:55 PM
Last modification on : Saturday, June 25, 2022 - 9:53:41 AM

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J. More-Chevalier, U. Lüders, C. Cibert, A. Nosov, B. Domengès, et al.. Magnetoelectric coupling in Pb(Zr,Ti)O 3 - Galfenol thin film heterostructures. Applied Physics Letters, American Institute of Physics, 2015, 107 (25), pp.252903. ⟨10.1063/1.4938218⟩. ⟨hal-02184127⟩

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