Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots Doping and surface passivation

Abstract : Zinc-doped InP(Zn) colloidal quantum dots (QDs) with narrow size distribution and low defect concentration were grown for the first time via a novel phosphine synthetic route and over a wide range of Zn doping. We report the influence of Zn on the optical properties of the obtained quantum dots. We propose a mechanism for the introduction of Zn in the QDs and show that the incorporation of Zn atoms into the InP lattice leads to the formation of Zn acceptor levels and a luminescence tail in the red region of the spectra. Using photochemical etching with HF, we confirmed that the Zn dopant atoms are situated inside the InP nanoparticles. Moreover, doping with Zn is accompanied with the coverage of the QDs by a zinc shell. During the synthesis Zn myristate covers the QD nucleus and inhibits the particle growth. At the same time the zinc shell leads to an increase of the luminescence quantum yield through the reduction of phosphorous dangling bonds. A scenario for the growth of the colloidal InP(Zn) QDs was proposed and discussed. © 2015 Mordvinova et al; licensee Beilstein-Institut.
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Soumis le : lundi 15 juillet 2019 - 18:04:33
Dernière modification le : mercredi 4 septembre 2019 - 17:36:03

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N.E. Mordvinova, A.A. Vinokurov, O.I. Lebedev, T.A. Kuznetsova, S.G. Dorofeev. Addition of Zn during the phosphine-based synthesis of indium phospide quantum dots Doping and surface passivation. Beilstein Journal of Nanotechnology, 2015, 6 (1), pp.1237-1246. ⟨10.3762/bjnano.6.127⟩. ⟨hal-02184117⟩

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